Comparison of Monte Carlo transport models for nanometer-size MOSFETs
نویسندگان
چکیده
This paper presents the results of a comparison among five Monte Carlo device simulators for nano-scale MOSFETs. The Monte Carlo models are applied to the simulation of the I-V characteristics of a 25 nm gate-length MOSFET representative of the highperformance transistor of the 65 nm technology node. Appreciable differences between the simulators are obtained in terms of simulated ION . These differences are mainly related to different treatments of the ionized impurity scattering (IIS) and pinpoint a limitation of the available models for screening effects at very large carrier concentrations.
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تاریخ انتشار 2007